Solid-State-Drive
Capacity: 2 TB (2000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Hardware Versions:
Elpis + V6
250 GB 500 GB 1 TB 2 TB
Phoenix + V5
250 GB 500 GB 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: 2021
Price at Launch: 220 USD
Part Number: MZ-V7S2T0B/AM
Market: Consumer
Physical
Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.06 W (Idle)
4.3 W (Avg)
6.2 W (Max)
Controller
Manufacturer: Samsung
Name: Elpis (S4LV003)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung
Process: 8 nm
Flash Channels: 8 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)
NAND Flash
Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to) 3000 P/E Cycles
Page Size: 16 KB
DRAM Cache
Type: LPDDR4-1866
Name: SAMSUNG K4F8E3D4HF-BGCH
Capacity: 2048 MB
(1x 2048 MB)
Organization: 16Gx32
Host-Memory-Buffer (HMB): N/A
Performance
Sequential Read: 3,500 MB/s
Sequential Write: 3,300 MB/s
Random Read: 620,000 IOPS
Random Write: 560,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes
Features
TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
AES-128 AES-256 TCG Opal
RGB Lighting: No
PS5 Compatible: No
