Solid-State-Drive
Capacity: 256 GB
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: Aug 2017
Price at Launch: 59 USD
Part Number: MZVLB256HAHQ-00000/07
Market: Consumer
Physical
Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.2
Power Draw: Unknown (Idle)
Unknown (Avg)
5.7 W (Max)
Controller
Manufacturer: Samsung
Name: Phoenix (S4LR020)
Architecture: ARM 32-bit Cortex-R7
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)
NAND Flash
Manufacturer: Samsung
Name: V-NAND V4
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 1 Tbit
Topology: Charge Trap
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to) 7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB
DRAM Cache
Type: LPDDR3
Name: Samsung
Capacity: 512 MB
(1x 512 MB)
Performance
Sequential Read: 3,000 MB/s
Sequential Write: 1,300 MB/s
Random Read: 130,000 IOPS
Random Write: 310,000 IOPS
Endurance: Unknown
Warranty: 3 Years
MTBF: 1.5 Million Hours
SLC Write Cache: approx. 25 GB
Speed when Cache Exhausted: approx. 600 MB/s
Features
TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
AES-256 TCG Opal
RGB Lighting: No
PS5 Compatible: No
